SANYO new chips---THB6128,THB7128,THB8128

[lihaijiang]

THB6128
*1 channel PWM current control stepping motor driver
*BiCDMOS process IC
*Output on-resistance ( High side 0.3 Ω, Low side 0.25 Ω, Total 0.55 Ω; Ta = 25°C, Io = 2.0 A)
*2, 1-2, W1-2, 2W1-2, 4W1-2, 8W1-2, 16W1-2, 32W1-2 phase excitation are selectable
*Advance the excitation step with the only step signal input
*Available forward reverse control
*Iomax=2.2A
*Over current protection circuit
*Thermal shutdown circuit
*Input pull down resistance
*With reset pin and enable pin

Absolute Maximum Ratings at Ta = 25° C
*Operating temperature(Topg): -20 to 85 ° C
*Storage temperature(Tstg): -55 to +150 ° C
*Package: MFP30KR
*Dimentions: 1.52*0.79*0.025cm
*Weight: 0.6g



THB7128
*PWM current control stepping motor driver
*Output on-resistance (High side 0.3ohm, Low side 0.25ohm, Total 0.55ohm; Ta = 25℃, Io = 2.5A)
*VMmax=40V(DC),Iopmax=3.3A
*2, 1-2, W1-2, 2W1-2, 4W1-2, 8W1-2, 16W1-2, 32W1-2 phase excitation are selectable
*With built-in automatic half current maintenance energizing function
*Over current protection circuit
*Thermal shutdown circuit
*Input pull down resistance
*With reset pin and enable pin

Absolute Maximum Ratings at Ta = 25° C
*Operating temperature(Topg): -20 to 105 ° C
*Storage temperature (Tstg): -40 to +125 ° C
*Package: HZIP25
*Dimentions: 2.92*1.29*0.45cm
*Weight: 3g



THB8128
*1 channel PWM current control stepping motor driver
*BiCDMOS process IC
*Output on-resistance( High side 0.25 Ω, Low side 0.15 Ω, Total 0.40 Ω; Ta = 25°C, Io = 4.0 A)
*Selectable phase drive (1/2, 1/8, 1/16,1/32, 1/64,1/128, 1/10,1/20step)
*Advance the excitation step with the only step signal input
*Available forward reverse control
*Iomax =4.3A
*Over current protection circuit
*Thermal shutdown circuit
*Input pull down resistance
*With reset pin and enable pin

Absolute Maximum Ratings at Ta = 25° C
*Operating temperature(Topg): -30 to 85 ° C
*Storage temperature (Tstg): -55 to +150 ° C
*Package: HZIP25
*Dimentions: 2.92*1.29*0.45cm
*Weight: 6g

[poorchava]

Is there some modern solution from Toshiba featuring external MOSFETS? 0.3R/0.25R of on-resistance might be good for integrated power stage, but in discrete MOSFETs it's state of technology from 15yrs ago. Discrete mosfets would allow much higher power throughoutput and lower heat losses.

A chip allowing for usage of N-MOSFETs in both high- and low-side with all the gate drive circuitry would be very nice. something similar to Allegro Micro A4989

LINK